Navitas Sets Reliability Benchmark with New 3300V and 2300V Ultra-High Voltage Silicon Carbide Portfolio
Ultra-High Voltage SiC Portfolio Targets Mission-Critical Power Infrastructure
Navitas Semiconductor (NASDAQ:NVTS) is expanding its high-voltage presence with the sample release of new 3300V and 2300V silicon carbide (SiC) power products. The move aims to support grid infrastructure, AI data centers, battery storage, and renewable energy—segments demanding uncompromising reliability and efficiency in power semiconductors.
Proprietary TAP Architecture Elevates Device Robustness and Performance
The new products, built on Navitas’ fourth-generation GeneSiC™ platform, introduce a Trench-Assisted Planar (TAP) SiC MOSFET architecture. This design deploys a multi-step electric field management profile, which reduces voltage stress and boosts blocking capabilities beyond those of traditional and trench-based SiC MOSFETs.
What sets the TAP architecture apart is its emphasis on long-term reliability and improved current handling. Navitas highlights:
- Superior avalanche robustness and lifetime reliability
- Optimal source contacts for enhanced current spread and reduced hot-temperature resistance
- Improved switching figures of merit
Innovative Packaging Drives System Durability and Efficiency
The 3300V and 2300V UHV devices arrive in both module and discrete formats. A key highlight is the SiCPAK™ G+ power module package, which delivers advanced heat dissipation via AlN DBC substrate and incorporates press-fit pins doubling current-carrying capacity. Unique epoxy-resin potting boosts the module's power cycling lifetime by over 60% and improves thermal shock reliability tenfold compared to conventional silicone-gel designs.
| Feature | 3300V/2300V UHV SiC | Industry Standard | Advantage |
|---|---|---|---|
| TAP MOSFET Architecture | Yes | Traditional/Trench | Reduced voltage stress, higher reliability |
| SiCPAK™ G+ Packaging | Yes | Silicone-gel | 60%+ power cycling, 10x thermal shock life |
| Press-Fit Pin Current Capacity | 2x per pin | Standard | Enhanced current delivery |
| Reliability Qualification | AEC-Plus | AEC-Q101 | Above industry standards |
Reliability Testing Goes Beyond Industry Standards
Reliability stands at the forefront, with Navitas debuting the 'AEC-Plus' qualification—a benchmark that pushes well past established AEC-Q101 and JEDEC protocols. Extended stress testing (over three times longer durations), dynamic application-specific switching tests, and comprehensive module qualification address the needs of demanding mission profiles. Rigorous multi-lot and power cycling assessments reinforce system longevity for critical infrastructure deployments.
Stringent Known Good Die Screening Raises Production Standards
Offering both module and bare die (Known Good Die or KGD) versions, Navitas executes advanced testing—room and high-temperature checks, and 6-side optical inspections—before delivery. This approach minimizes risk and ensures consistent module reliability, even in custom or highly integrated applications.
Market Position: Focusing on High-Growth Power Applications
Navitas’ strategy centers on performance computing, energy infrastructure, and industrial electrification, intentionally stepping back from mobile and consumer segments. As the energy transition accelerates, these ultra-high voltage SiC products will likely become foundational for high-power converters in data centers, battery energy storage, and grid modernization projects.
Key Takeaway: Reliability Benchmark and Advanced Technology Pave Path to 10 kV Solutions
With over 300 patents and a carbon-neutral operation, Navitas’ latest 3300V and 2300V SiC MOSFETs extend both the technological and reliability frontiers. Their proprietary TAP structure, SiCPAK™ G+ packaging, and advanced qualification protocols set a high bar for the sector—and signal an ambitious roadmap toward 10 kV solutions in the near future.
For more technical information or sample requests, readers can visit Navitas Semiconductor's official site.
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